MRF6V10250HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6V10250HSR3 Test Circuit Schematic
Z5, Z6 0.625″
x 0.300″
Microstrip
Z10 0.430″
x 0.080″
Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030″,
εr
=2.55
* Line length includes microstrip bends
Z1 0.40″
x 0.080″
Microstrip
Z2*, Z9* 1.29″
x 0.080″
Microstrip
Z3*, Z8* 0.22″
x 0.480″
Microstrip
Z4, Z7 0.22″
x 0.625″
x 0.220″
Taper
Z1
RF
INPUT
C1
Z2
Z4
DUT
Z7
C10
RF
OUTPUT
VBIAS
VSUPPLY
C6
C12
C15
C13
+
Z10
Z6
R2
L1
L2
Z8
Z9
C11
C7
R1
C2
C3
Z3
C14
+
C9
C8
Z5
C4
C5
Table 5. MRF6V10250HSR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
240 pF Chip Capacitor
ATC100B241JT500XT
ATC
C2, C9, C11
1.8 pF Chip Capacitors
ATC100B1R8CT500XT
ATC
C3
3.3 pF Chip Capacitor
ATC100B3R3CT500XT
ATC
C4, C5
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C6, C10, C12
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C7, C15
2.2
μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C8
4.7 pF Chip Capacitor
ATC100B4R7CT500XT
ATC
C13, C14
470
μF, 63 V Electrolytic Capacitors
EKME633ELL471MK25S
Multicomp
L1
5 nH, 2 Turn Inductor
A02TKLC
Coilcraft
L2
7 nH, Hand Wound
2T, 18awg
Freescale
R1
10
?, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
R2
20
?, 1 W Chip Resistor
CRCW251220R0FKEA
Vishay
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
相关PDF资料
MRF6V12500HR5 FET RF N-CH 1.03GHZ 100V NI-780H
MRF6V14300HSR5 MOSFET RF N-CH 50V NI780S
MRF6V2010GNR5 MOSFET RF N-CH 10W TO-270-2
MRF6V2150NBR5 MOSFET RF N-CH 50V TO272-4
MRF6V2300NR5 MOSFET RF N-CH 300W TO-270-4
MRF6V3090NR5 FET RF N-CH 860MHZ 50V TO270-4
MRF6V4300NR5 MOSFET RF N-CH 300W TO-270-4
MRF6VP11KHR6 MOSFET RF N-CH 1000W NI1230
相关代理商/技术参数
MRF6V12250HR3 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HR5 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HSR3 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HSR5 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12500H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6V12500HR3 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12500HR3_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V12500HR5 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray